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RGTH00TS65DGC11 Tech Specifications

IGBT 650V 85A 277W TO-247N

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 17 Weeks
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Elements 1
Input Type Standard
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 650V
Reverse Recovery Time 54 ns
Collector Emitter Saturation Voltage 1.6V
Test Condition 400V, 50A, 10 Ω, 15V
Continuous Collector Current 50A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 200A
REACH SVHC Unknown
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-3
Weight 38.000013g
Operating Temperature -40°C~175°C TJ
Published 2014
Part Status Active
Number of Terminations 3
Max Power Dissipation 277W
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Power - Max 277W
Polarity/Channel Type N-CHANNEL
Max Collector Current 85A
Collector Emitter Breakdown Voltage 650V
Turn On Time 102 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
Turn Off Time-Nom (toff) 221 ns
Gate Charge 94nC
Td (on/off) @ 25°C 39ns/143ns
RoHS Status ROHS3 Compliant
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RGTH00TS65DGC11 Documents

Download datasheets and manufacturer documentation for RGTH00TS65DGC11

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