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RGW60TS65DGC11 Tech Specifications

650V 30A FIELD STOP TRENCH IGBT

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 17 Weeks
Package / Case TO-247-3
Transistor Element Material SILICON
Part Status Active
Number of Terminations 3
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Power - Max 178W
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 650V
Turn On Time 50 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 30A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 120A
Switching Energy 480μJ (on), 490μJ (off)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Operating Temperature -40°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Input Type Standard
Transistor Application POWER CONTROL
Reverse Recovery Time 92ns
Current - Collector (Ic) (Max) 60A
Test Condition 400V, 30A, 10 Ω, 15V
Turn Off Time-Nom (toff) 209 ns
Gate Charge 84nC
Td (on/off) @ 25°C 37ns/114ns
RoHS Status ROHS3 Compliant
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RGW60TS65DGC11 Documents

Download datasheets and manufacturer documentation for RGW60TS65DGC11

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