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RQ1E050RPTR Tech Specifications

MOSFET P-CH 30V 5A TSMT8

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature 150°C TJ
Published 2012
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Terminal Position DUAL
[email protected] Reflow Temperature-Max (s) 10
Number of Elements 1
Number of Channels 1
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Rds On (Max) @ Id, Vgs 31m Ω @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Turn-Off Delay Time 90 ns
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 20A
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-SMD, Flat Lead
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e2
Part Status Active
Number of Terminations 8
Terminal Finish Tin/Copper (Sn/Cu)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Pin Count 8
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 700mW Ta
Turn On Delay Time 10 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 1mA
Current - Continuous Drain (Id) @ 25°C 5A Ta
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Fall Time (Typ) 50 ns
Continuous Drain Current (ID) 5A
Drain Current-Max (Abs) (ID) 5A
DS Breakdown Voltage-Min 30V
RoHS Status ROHS3 Compliant
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