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RSR030N06TL Tech Specifications

MOSFET N-CH 60V 3A TSMT3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature 150°C TJ
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 10
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 85m Ω @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 10V
Rise Time 12ns
Vgs (Max) ±20V
Turn-Off Delay Time 30 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.105Ohm
Height 950μm
Width 1.8mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount, Through Hole
Package / Case SC-96
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e1
Part Status Not For New Designs
Number of Terminations 3
Subcategory FET General Purpose Power
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Pin Count 3
Power Dissipation-Max 540mW Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 8 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 1mA
Current - Continuous Drain (Id) @ 25°C 3A Ta
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 3A
Drain Current-Max (Abs) (ID) 3A
Drain to Source Breakdown Voltage 60V
Length 3mm
Radiation Hardening No
Lead Free Lead Free
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