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RSS100N03FRATB Tech Specifications

4V DRIVE NCH MOSFET (CORRESPONDS

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 20 Weeks
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Series Automotive, AEC-Q101
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PDSO-G8
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 1mA
Current - Continuous Drain (Id) @ 25°C 10A Ta
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.0189Ohm
DS Breakdown Voltage-Min 30V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature 150°C TJ
Published 2017
Part Status Active
Number of Terminations 8
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 2W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13.3m Ω @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1070pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Drain Current-Max (Abs) (ID) 10A
Pulsed Drain Current-Max (IDM) 40A
RoHS Status ROHS3 Compliant
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RSS100N03FRATB Documents

Download datasheets and manufacturer documentation for RSS100N03FRATB

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