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RZM001P02T2L Tech Specifications

MOSFET P-CH 20V 0.1A VMT3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Part Status Active
Number of Terminations 3
Subcategory Other Transistors
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 46 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1V @ 100μA
Current - Continuous Drain (Id) @ 25°C 100mA Ta
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Turn-Off Delay Time 325 ns
Gate to Source Voltage (Vgs) 10V
Max Junction Temperature (Tj) 150°C
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case SOT-723
Operating Temperature 150°C TJ
Published 2005
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Reach Compliance Code not_compliant
JESD-30 Code R-PDSO-F3
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Power Dissipation-Max 150mW Ta
Power Dissipation 150W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 3.8 Ω @ 100mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 15pF @ 10V
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±10V
Continuous Drain Current (ID) 100mA
Drain to Source Breakdown Voltage -20V
Height 550μm
Lead Free Lead Free
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RZM001P02T2L Documents

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