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RZR025P01TL Tech Specifications

MOSFET P-CH 12V 2.5A TSMT3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature 150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 10
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 61m Ω @ 2.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 6V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V
Drain to Source Voltage (Vdss) 12V
Vgs (Max) ±10V
Turn-Off Delay Time 130 ns
Threshold Voltage -300mV
Drain-source On Resistance-Max 0.061Ohm
Nominal Vgs -300 mV
Length 2.9mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case SC-96
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e1
Part Status Not For New Designs
Number of Terminations 3
Subcategory Other Transistors
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Pin Count 3
Power Dissipation-Max 1W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 9 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1V @ 1mA
Current - Continuous Drain (Id) @ 25°C 2.5A Ta
Rise Time 35ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Fall Time (Typ) 85 ns
Continuous Drain Current (ID) 2.5A
Gate to Source Voltage (Vgs) 10V
Drain to Source Breakdown Voltage -12V
Height 850μm
Width 1.6mm
REACH SVHC No SVHC
Lead Free Lead Free
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RZR025P01TL Documents

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