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SP8J3FU6TB Tech Specifications

MOSFET 2P-CH 30V 3.5A 8SOIC

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Operating Temperature 150°C TJ
Published 2006
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Base Part Number *J3
Power Dissipation 2W
FET Type 2 P-Channel (Dual)
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 5V
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 3.5A
Gate to Source Voltage (Vgs) 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 8
Packaging Tape & Reel (TR)
Part Status Obsolete
ECCN Code EAR99
Max Power Dissipation 2W
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 10 ns
Rds On (Max) @ Id, Vgs 90m Ω @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 10V
Rise Time 15ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 35 ns
Threshold Voltage -2.5V
Drain to Source Breakdown Voltage 30V
FET Feature Logic Level Gate
REACH SVHC No SVHC
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SP8J3FU6TB Documents

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