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SP8M4FU6TB Tech Specifications

MOSFET N/P-CH 30V 9A/7A 8SOIC

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Operating Temperature 150°C TJ
Published 2004
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 2W
Element Configuration Dual
FET Type N and P-Channel
Vgs(th) (Max) @ Id 2.5V @ 1mA
Current - Continuous Drain (Id) @ 25°C 9A 7A
Rise Time 50ns
Turn-Off Delay Time 110 ns
Threshold Voltage 2.5V
Drain to Source Breakdown Voltage 30V
FET Feature Logic Level Gate
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 8
Packaging Tape & Reel (TR)
Part Status Obsolete
Termination SMD/SMT
Resistance 18MOhm
Base Part Number *M4
Power Dissipation 2W
Rds On (Max) @ Id, Vgs 18m Ω @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1190pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 21nC @ 5V
Fall Time (Typ) 70 ns
Continuous Drain Current (ID) 7A
Gate to Source Voltage (Vgs) 20V
Dual Supply Voltage 30V
Nominal Vgs 2.5 V
REACH SVHC No SVHC
Lead Free Lead Free
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SP8M4FU6TB Documents

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