SST3904T116 Tech Specifications

SST3904T116 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SST3
Packaging Tape & Reel (TR)
Part Status Active
Max Operating Temperature 150°C
Max Power Dissipation 350mW
Number of Elements 1
Element Configuration Single
Gain Bandwidth Product 300MHz
Collector Emitter Voltage (VCEO) 40V
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 40V
Collector Emitter Saturation Voltage 300mV
Frequency - Transition 300MHz
Emitter Base Voltage (VEBO) 6V
Max Junction Temperature (Tj) 150°C
Height 1.2mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Copper, Silver, Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature 150°C TJ
Published 2007
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Min Operating Temperature -55°C
Base Part Number T3904
Polarity NPN
Power - Max 350mW
Transistor Type NPN
Max Collector Current 200mA
Current - Collector Cutoff (Max) 50nA
Collector Emitter Breakdown Voltage 40V
Current - Collector (Ic) (Max) 200mA
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 60V
hFE Min 40
Continuous Collector Current 200mA
Radiation Hardening No
Lead Free Lead Free
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SST3904T116 Documents

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