SSTA13T116 Tech Specifications

SSTA13T116 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Base Part Number STA13
Polarity NPN
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
Max Collector Current 300mA
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 30V
Transition Frequency 125MHz
Emitter Base Voltage (VEBO) 10V
VCEsat-Max 1.5 V
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature 150°C TJ
Published 2004
Part Status Not For New Designs
Number of Terminations 3
HTS Code 8541.21.00.75
Max Power Dissipation 200mW
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 10
Number of Elements 1
Element Configuration Single
Gain Bandwidth Product 125MHz
Collector Emitter Voltage (VCEO) 30V
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA 5V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
Current - Collector (Ic) (Max) 300mA
Collector Base Voltage (VCBO) 30V
hFE Min 5000
Collector-Base Capacitance-Max 7pF
RoHS Status ROHS3 Compliant
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SSTA13T116 Documents

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