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HAT1126RWS-E Tech Specifications

MOSFET P-CH SOP8

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Renesas Electronics America
Factory Lead Time 3 Weeks
Mounting Type Surface Mount
Operating Temperature 150°C
Part Status Obsolete
Power - Max 3W Ta
Rds On (Max) @ Id, Vgs 50m Ω @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
FET Feature Logic Level Gate, 4.5V Drive
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case 8-SOIC (0.154, 3.90mm Width)
Packaging Tape & Reel (TR)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET Type 2 P-Channel (Dual)
Vgs(th) (Max) @ Id 2.5V @ 1mA
Current - Continuous Drain (Id) @ 25°C 6A Ta
Drain to Source Voltage (Vdss) 60V
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HAT1126RWS-E Documents

Download datasheets and manufacturer documentation for HAT1126RWS-E

  • Datasheets

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