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TSM033NA03CR RLG Tech Specifications

MOSFET N-CH 30V 129A 8PDFN

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer TSC (Taiwan Semiconductor)
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2.5V @ 250µA
Technology MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 3.3 mOhm @ 21A, 10V
Packaging Original-Reel®
Other Names TSM033NA03CR RLGDKR TSM033NA03CR RLGDKR-ND TSM033NA03CRRLGDKR
Mounting Type Surface Mount
Manufacturer Standard Lead Time 32 Weeks
Input Capacitance (Ciss) (Max) @ Vds 1850pF @ 15V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Detailed Description N-Channel 30V 129A (Tc) 96W (Tc) Surface Mount 8-PDFN (5x6)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package 8-PDFN (5x6)
Power Dissipation (Max) 96W (Tc)
Package / Case 8-PowerTDFN
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 129A (Tc)
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