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TSM10N80CI C0G Tech Specifications

MOSFET N-CH 800V 9.5A ITO220

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer TSC (Taiwan Semiconductor)
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 4V @ 250µA
Technology MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 1.05 Ohm @ 4.75A, 10V
Packaging Tube
Other Names TSM10N80CI C0G-ND TSM10N80CIC0G
Mounting Type Through Hole
Manufacturer Standard Lead Time 24 Weeks
Input Capacitance (Ciss) (Max) @ Vds 2336pF @ 25V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Detailed Description N-Channel 800V 9.5A (Tc) 48W (Tc) Through Hole ITO-220
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±30V
Supplier Device Package ITO-220
Power Dissipation (Max) 48W (Tc)
Package / Case TO-220-3 Full Pack, Isolated Tab
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 9.5A (Tc)
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