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TSM200N03DPQ33 RGG Tech Specifications

MOSFET 2 N-CH 30V 20A 8PDFN

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Manufacturer TSC (Taiwan Semiconductor)
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2.5V @ 250µA
Rds On (Max) @ Id, Vgs 20 mOhm @ 10A, 10V
Packaging Tape & Reel (TR)
Other Names TSM200N03DPQ33 RGGTR TSM200N03DPQ33 RGGTR-ND TSM200N03DPQ33RGGTR
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
FET Feature Standard
Detailed Description Mosfet Array 2 N-Channel (Dual) 30V 20A (Tc) 20W Surface Mount 8-PDFN (3x3)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Supplier Device Package 8-PDFN (3x3)
Power - Max 20W
Package / Case 8-PowerWDFN
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Input Capacitance (Ciss) (Max) @ Vds 345pF @ 25V
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
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TSM200N03DPQ33 RGG Documents

Download datasheets and manufacturer documentation for TSM200N03DPQ33 RGG

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