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TSM2N100CP ROG Tech Specifications

MOSFET N-CH 1000V 1.85A TO252

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer TSC (Taiwan Semiconductor)
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 5.5V @ 250µA
Technology MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 8.5 Ohm @ 900mA, 10V
Packaging Cut Tape (CT)
Other Names TSM2N100CP ROGCT TSM2N100CP ROGCT-ND TSM2N100CPROGCT
Mounting Type Surface Mount
Manufacturer Standard Lead Time 52 Weeks
Input Capacitance (Ciss) (Max) @ Vds 625pF @ 25V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Detailed Description N-Channel 1000V 1.85A (Tc) 77W (Tc) Surface Mount TO-252, (D-Pak)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±30V
Supplier Device Package TO-252, (D-Pak)
Power Dissipation (Max) 77W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 1.85A (Tc)
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TSM2N100CP ROG Documents

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