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TSM3N80CZ C0G Tech Specifications

MOSFET N-CHANNEL 800V 3A TO220

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer TSC (Taiwan Semiconductor)
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 4V @ 250µA
Technology MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 4.2 Ohm @ 1.5A, 10V
Packaging Tube
Other Names TSM3N80CZ C0G-ND TSM3N80CZC0G
Mounting Type Through Hole
Manufacturer Standard Lead Time 24 Weeks
Input Capacitance (Ciss) (Max) @ Vds 696pF @ 25V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Detailed Description N-Channel 800V 3A (Tc) 94W (Tc) Through Hole TO-220
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±30V
Supplier Device Package TO-220
Power Dissipation (Max) 94W (Tc)
Package / Case TO-220-3
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
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