TC58BVG0S3HTAI0 Tech Specifications

IC FLASH 1G PARALLEL 48TSOP I

Product Attribute Attribute Value
Category Integrated Circuits (ICs) / Memory
Manufacturer Toshiba Memory America, Inc.
Factory Lead Time 3 Weeks
Write Cycle Time - Word, Page 25ns
Technology FLASH - NAND (SLC)
Series Benand™
Package / Case 48-TFSOP (0.724", 18.40mm Width)
Operating Temperature -40°C ~ 85°C (TA)
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Memory Size 1Gb (128M x 8)
Memory Format FLASH
Detailed Description FLASH - NAND (SLC) Memory IC 1Gb (128M x 8) Parallel 25ns 48-TSOP I
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Voltage - Supply 2.7 V ~ 3.6 V
Supplier Device Package 48-TSOP I
Packaging Tray
Other Names TC58BVG0S3HTAI0B4H TC58BVG0S3HTAI0YCJ TC58BVG0S3HTAI0YCL
Mounting Type Surface Mount
Memory Type Non-Volatile
Memory Interface Parallel
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Access Time 25ns
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TC58BVG0S3HTAI0 Documents

Download datasheets and manufacturer documentation for TC58BVG0S3HTAI0

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TC58BVG0S3HBAI4 Toshiba Memory America, Inc. Memory 407
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TC58BVG0S3HBAI4JDH TOSHIBA Specialized Hot ICs 2576
TC58BVG0S3HBAI6 Toshiba Semiconductor and Storage Memory 1113
TC58BVG0S3HBAI6 Toshiba Memory America, Inc. Memory 10367
TC58BVG0S3HTA0 Toshiba Semiconductor and Storage Specialized Hot ICs 619
TC58BVG0S3HTA00 Toshiba Semiconductor and Storage Memory 91467
TC58BVG0S3HTA00 Toshiba Memory America, Inc. Memory 2991
TC58BVG0S3HTA00 IC Toshiba Semiconductor and Storage Specialized Hot ICs 747
TC58BVG0S3HTAI0 Toshiba Semiconductor and Storage Memory 21402

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