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2SA1020-Y,F(M Tech Specifications

TRANS PNP 2A 50V TO226-3

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Manufacturer Toshiba Semiconductor and Storage
Factory Lead Time 3 Weeks
Voltage - Collector Emitter Breakdown (Max) 50V
Transistor Type PNP
Power - Max 900mW
Package / Case TO-226-3, TO-92-3 Long Body
Operating Temperature 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequency - Transition 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA, 2V
Current - Collector (Ic) (Max) 2A
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 1A
Supplier Device Package TO-92MOD
Packaging Bulk
Other Names 2SA1020-YF(M
Mounting Type Through Hole
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description Bipolar (BJT) Transistor PNP 50V 2A 100MHz 900mW Through Hole TO-92MOD
Current - Collector Cutoff (Max) 1µA (ICBO)
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