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2SA1930,LBS2DIAQ(J Tech Specifications

TRANS PNP 2A 180V TO220-3

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Manufacturer Toshiba Semiconductor and Storage
Factory Lead Time 3 Weeks
Voltage - Collector Emitter Breakdown (Max) 180V
Transistor Type PNP
Power - Max 2W
Package / Case TO-220-3 Full Pack
Operating Temperature 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequency - Transition 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 5V
Current - Collector (Ic) (Max) 2A
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 1A
Supplier Device Package TO-220NIS
Packaging Bulk
Other Names 2SA1930LBS2DIAQ(J 2SA1930LBS2DIAQJ
Mounting Type Through Hole
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description Bipolar (BJT) Transistor PNP 180V 2A 200MHz 2W Through Hole TO-220NIS
Current - Collector Cutoff (Max) 5µA (ICBO)
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