2SC1627A-Y,PASF(M Tech Specifications

TRANS NPN 400MA 80V TO226-3

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Manufacturer Toshiba Semiconductor and Storage
Factory Lead Time 3 Weeks
Voltage - Collector Emitter Breakdown (Max) 80V
Transistor Type NPN
Power - Max 800mW
Package / Case TO-226-3, TO-92-3 Long Body
Mounting Type Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 2V
Current - Collector (Ic) (Max) 400mA
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vce Saturation (Max) @ Ib, Ic 400mV @ 20mA, 200A
Supplier Device Package TO-92MOD
Packaging Bulk
Operating Temperature 150°C (TJ)
Frequency - Transition 100MHz
Current - Collector Cutoff (Max) 100nA (ICBO)
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