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GT30J121(Q) Tech Specifications

Trans IGBT Chip N-CH 600V 30A 3-Pin(3+Tab) TO-3PN

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Toshiba Semiconductor and Storage
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-3P-3, SC-65-3
Packaging Tube
Part Status Active
Max Operating Temperature 150°C
Max Power Dissipation 170W
Input Type Standard
Max Collector Current 30A
Test Condition 300V, 30A, 24 Ω, 15V
Current - Collector Pulsed (Icm) 60A
Switching Energy 1mJ (on), 800μJ (off)
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 3
Published 2006
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Min Operating Temperature -55°C
Element Configuration Single
Collector Emitter Voltage (VCEO) 600V
Collector Emitter Breakdown Voltage 600V
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 30A
Td (on/off) @ 25°C 90ns/300ns
Radiation Hardening No
Lead Free Lead Free
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GT30J121(Q) Documents

Download datasheets and manufacturer documentation for GT30J121(Q)

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GT30J121(Q) brand manufacturers: Toshiba Semiconductor and Storage, Bonchip stock, GT30J121(Q) reference price. GT30J121(Q) parameters, GT30J121(Q) Datasheet PDF and pin diagram description download.You can use the GT30J121(Q) Pluggable Connectors, DSP Datesheet PDF, find GT30J121(Q) pin diagram and circuit diagram and usage method of function, GT30J121(Q) electronics tutorials.You can download from the Bonchip.
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