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HN3C10FUTE85LF Tech Specifications

TRANSISTOR NPN US6

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Manufacturer Toshiba Semiconductor and Storage
Factory Lead Time 3 Weeks
Voltage - Collector Emitter Breakdown (Max) 12V
Supplier Device Package US6
Packaging Cut Tape (CT)
Operating Temperature -
Mounting Type Surface Mount
Frequency - Transition 7GHz
Current - Collector (Ic) (Max) 80mA
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Transistor Type 2 NPN (Dual)
Power - Max 200mW
Package / Case 6-TSSOP, SC-88, SOT-363
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
Gain 11.5dB
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 20mA, 10V
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HN3C10FUTE85LF Documents

Download datasheets and manufacturer documentation for HN3C10FUTE85LF

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