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MT3S111P(TE12L,F) Tech Specifications

RF SIGE HETEROJUNCTION BIPOLAR N

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Manufacturer Toshiba Semiconductor and Storage
Factory Lead Time 3 Weeks
Voltage - Collector Emitter Breakdown (Max) 6V
Supplier Device Package PW-MINI
Packaging Cut Tape (CT)
Other Names MT3S111P(TE12LF)CT
Noise Figure (dB Typ @ f) 1.25dB @ 1GHz
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 8GHz
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Transistor Type NPN
Power - Max 1W
Package / Case TO-243AA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Manufacturer Standard Lead Time 12 Weeks
Gain 10.5dB
Detailed Description RF Transistor NPN 6V 100mA 8GHz 1W Surface Mount PW-MINI
Current - Collector (Ic) (Max) 100mA
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MT3S111P(TE12L,F) Documents

Download datasheets and manufacturer documentation for MT3S111P(TE12L,F)

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