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MT3S111TU,LF Tech Specifications

RF SIGE NPN BIPOLAR TRANSISTOR N

Product Attribute Attribute Value
Category Discrete Semiconductors / RF BJT Transistors
Manufacturer Toshiba Semiconductor and Storage
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Package / Case 3-SMD, Flat Lead
Packaging Tape & Reel (TR)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Type NPN
Gain 12.5dB
Current - Collector (Ic) (Max) 100mA
Noise Figure (dB Typ @ f) 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Operating Temperature 150°C TJ
Part Status Active
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power - Max 800mW
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA 5V
Voltage - Collector Emitter Breakdown (Max) 6V
Frequency - Transition 10GHz
RoHS Status RoHS Compliant
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MT3S111TU,LF Documents

Download datasheets and manufacturer documentation for MT3S111TU,LF

  • Datasheets

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