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RN1101MFV,L3F(CT Tech Specifications

TRANS PREBIAS NPN 50V 0.1A VESM

Product Attribute Attribute Value
Category Discrete Semiconductors / Pre-Biased BJT Transistors
Manufacturer Toshiba Semiconductor and Storage
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Package / Case SOT-723
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Transistor Type NPN - Pre-Biased
Current - Collector Cutoff (Max) 500nA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 4.7 k Ω
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Part Status Active
Power - Max 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 5mA
Current - Collector (Ic) (Max) 100mA
Resistor - Emitter Base (R2) 4.7 k Ω
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RN1101MFV,L3F(CT Documents

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