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RN1408,LF Tech Specifications

Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor

Product Attribute Attribute Value
Category Discrete Semiconductors / Pre-Biased BJT Transistors
Manufacturer Toshiba Semiconductor and Storage
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Package / Case TO-236-3, SC-59, SOT-23-3
Part Status Discontinued
Max Power Dissipation 200mW
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Frequency - Transition 250MHz
hFE Min 80
Continuous Collector Current 100mA
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Packaging Cut Tape (CT)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Polarity NPN
Collector Emitter Voltage (VCEO) 50V
Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA
Emitter Base Voltage (VEBO) 7V
Resistor - Base (R1) 22 k Ω
Resistor - Emitter Base (R2) 47 k Ω
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RN1408,LF Documents

Download datasheets and manufacturer documentation for RN1408,LF

  • Datasheets

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RN1408,LF brand manufacturers: Toshiba Semiconductor and Storage, Bonchip stock, RN1408,LF reference price. RN1408,LF parameters, RN1408,LF Datasheet PDF and pin diagram description download.You can use the RN1408,LF Pluggable Connectors, DSP Datesheet PDF, find RN1408,LF pin diagram and circuit diagram and usage method of function, RN1408,LF electronics tutorials.You can download from the Bonchip.
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