RN1508(TE85L,F) Tech Specifications

TRANS 2NPN PREBIAS 0.3W SMV

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer Toshiba Semiconductor and Storage
Factory Lead Time 3 Weeks
Voltage - Collector Emitter Breakdown (Max) 50V
Transistor Type 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Resistor - Emitter Base (R2) (Ohms) 47k
Power - Max 300mW
Package / Case SC-74A, SOT-753
Frequency - Transition 250MHz
Current - Collector Cutoff (Max) 100nA (ICBO)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Supplier Device Package SMV
Resistor - Base (R1) (Ohms) 22k
Packaging Tape & Reel (TR)
Mounting Type Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Current - Collector (Ic) (Max) 100mA
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RN1508(TE85L,F) Documents

Download datasheets and manufacturer documentation for RN1508(TE85L,F)

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RN1502 TOSHIBA Specialized Hot ICs 14108
RN1502(TE85L,F) Toshiba Semiconductor and Storage Transistors - Bipolar (BJT) - Arrays, Pre-Biased 2520
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RN1503 (TE85R) Toshiba Semiconductor and Storage Specialized Hot ICs 6000
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