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RN1911FETE85LF Tech Specifications

TRANS 2NPN PREBIAS 0.1W ES6

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer Toshiba Semiconductor and Storage
Factory Lead Time 3 Weeks
Voltage - Collector Emitter Breakdown (Max) 50V
Transistor Type 2 NPN - Pre-Biased (Dual)
Resistor - Emitter Base (R2) (Ohms) -
Power - Max 100mW
Package / Case SOT-563, SOT-666
Frequency - Transition 250MHz
Current - Collector Cutoff (Max) 100nA (ICBO)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Supplier Device Package ES6
Resistor - Base (R1) (Ohms) 10k
Packaging Tape & Reel (TR)
Mounting Type Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Current - Collector (Ic) (Max) 100mA
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RN1911FETE85LF Documents

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RN1911FETE85LF brand manufacturers: Toshiba Semiconductor and Storage, Bonchip stock, RN1911FETE85LF reference price. RN1911FETE85LF parameters, RN1911FETE85LF Datasheet PDF and pin diagram description download.You can use the RN1911FETE85LF Pluggable Connectors, DSP Datesheet PDF, find RN1911FETE85LF pin diagram and circuit diagram and usage method of function, RN1911FETE85LF electronics tutorials.You can download from the Bonchip.
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