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RN1963(TE85L,F) Tech Specifications

TRANS 2NPN PREBIAS 0.2W US6

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer Toshiba Semiconductor and Storage
Factory Lead Time 3 Weeks
Voltage - Collector Emitter Breakdown (Max) 50V
Transistor Type 2 NPN - Pre-Biased (Dual)
Resistor - Emitter Base (R2) (Ohms) 22k
Power - Max 200mW
Package / Case 6-TSSOP, SC-88, SOT-363
Frequency - Transition 250MHz
Current - Collector Cutoff (Max) 100nA (ICBO)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Supplier Device Package US6
Resistor - Base (R1) (Ohms) 22k
Packaging Tape & Reel (TR)
Mounting Type Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V
Current - Collector (Ic) (Max) 100mA
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RN1963(TE85L,F) Documents

Download datasheets and manufacturer documentation for RN1963(TE85L,F)

Others include   "RN196"   parts

The following parts include  'RN196' 

Part # Manufacturer Category Availability
RN1961(TE85L,F) Toshiba Semiconductor and Storage Transistors - Bipolar (BJT) - Arrays, Pre-Biased 2656
RN1961FE TOSHIBA Specialized Hot ICs 15495
RN1961FE(TE85L,F) Toshiba Semiconductor and Storage Transistors - Bipolar (BJT) - Arrays, Pre-Biased 52000
RN1962 TOSHIBA Specialized Hot ICs 3189
RN1962(TE85L Toshiba Semiconductor and Storage Specialized Hot ICs 3208
RN1962(TE85L ,F) Toshiba Semiconductor and Storage Specialized Hot ICs 3000
RN1962(TE85L,F) TOSHIBA Specialized Hot ICs 3000
RN1962FE TOSHIBA Specialized Hot ICs 6394
RN1962FE(TE85L,F) Toshiba Semiconductor and Storage Transistors - Bipolar (BJT) - Arrays, Pre-Biased 2561
RN1962FE(TE85L.F) Original Specialized Hot ICs 0

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