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RN4989(TE85L,F) Tech Specifications

NPN + PNP BRT, Q1BSR=47K?, Q1BER

Product Attribute Attribute Value
Category Discrete Semiconductors / BJT Transistors Arrays
Manufacturer Toshiba Semiconductor and Storage
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Package / Case 6-TSSOP, SC-88, SOT-363
Transistor Element Material SILICON
Part Status Active
Subcategory BIP General Purpose Small Signal
Power - Max 200mW
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector Cutoff (Max) 500nA
Voltage - Collector Emitter Breakdown (Max) 50V
Frequency - Transition 250MHz 200MHz
Resistor - Base (R1) 47k Ω
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Packaging Tape & Reel (TR)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Elements 2
Polarity/Channel Type NPN/PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Current - Collector (Ic) (Max) 100mA
Power Dissipation-Max (Abs) 0.2W
Resistor - Emitter Base (R2) 22k Ω
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RN4989(TE85L,F) Documents

Download datasheets and manufacturer documentation for RN4989(TE85L,F)

  • Datasheets

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