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SSM5N16FUTE85LF Tech Specifications

MOSFET N-CH 20V 0.1A USV

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id -
Technology MOSFET (Metal Oxide)
Series π-MOSVI
Power Dissipation (Max) 200mW (Ta)
Package / Case 5-TSSOP, SC-70-5, SOT-353
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs -
FET Feature -
Drain to Source Voltage (Vdss) 20V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±10V
Supplier Device Package USV
Rds On (Max) @ Id, Vgs 3 Ohm @ 10mA, 4V
Packaging Tape & Reel (TR)
Operating Temperature 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 9.3pF @ 3V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4V
Current - Continuous Drain (Id) @ 25°C 100mA (Ta)
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SSM5N16FUTE85LF Documents

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