TPN2R805PL,L1Q Tech Specifications

X35 PB-F POWER MOSFET TRANSISTOR

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2.4V @ 300µA
Technology MOSFET (Metal Oxide)
Series U-MOSIX-H
Power Dissipation (Max) 2.67W (Ta), 104W (Tc)
Other Names TPN2R805PLL1Q
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 3.2nF @ 22.5V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Detailed Description N-Channel 45V 139A (Ta), 80A (Tc) 2.67W (Ta), 104W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package 8-TSON Advance (3.3x3.3)
Rds On (Max) @ Id, Vgs 2.8 mOhm @ 40A, 10V
Package / Case 8-PowerVDFN
Operating Temperature 175°C
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 45V
Current - Continuous Drain (Id) @ 25°C 139A (Ta), 80A (Tc)
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TPN2R805PL,L1Q Documents

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TPN2R805PL,L1Q brand manufacturers: Toshiba Semiconductor and Storage, Bonchip stock, TPN2R805PL,L1Q reference price. TPN2R805PL,L1Q parameters, TPN2R805PL,L1Q Datasheet PDF and pin diagram description download.You can use the TPN2R805PL,L1Q Pluggable Connectors, DSP Datesheet PDF, find TPN2R805PL,L1Q pin diagram and circuit diagram and usage method of function, TPN2R805PL,L1Q electronics tutorials.You can download from the Bonchip.
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