TPN5900CNH,L1Q Tech Specifications

MOSFET N-CH 150V 9A 8TSON

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 4V @ 200µA
Technology MOSFET (Metal Oxide)
Series U-MOSVIII-H
Power Dissipation (Max) 700mW (Ta), 39W (Tc)
Package / Case 8-PowerVDFN
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 150V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package 8-TSON Advance (3.3x3.3)
Rds On (Max) @ Id, Vgs 59 mOhm @ 4.5A, 10V
Packaging Tape & Reel (TR)
Operating Temperature 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 75V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 9A (Ta)
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TPN5900CNH,L1Q Documents

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Part # Manufacturer Category Availability
TPN5900CNH Toshiba Semiconductor and Storage Specialized Hot ICs 9308

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TPN5900CNH,L1Q brand manufacturers: Toshiba Semiconductor and Storage, Bonchip stock, TPN5900CNH,L1Q reference price. TPN5900CNH,L1Q parameters, TPN5900CNH,L1Q Datasheet PDF and pin diagram description download.You can use the TPN5900CNH,L1Q Pluggable Connectors, DSP Datesheet PDF, find TPN5900CNH,L1Q pin diagram and circuit diagram and usage method of function, TPN5900CNH,L1Q electronics tutorials.You can download from the Bonchip.
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