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MG250V2YMS3 Tech Specifications
The MG250V2YMS3 from Toshiba is a MOSFET with Continous Drain Current 250 A, Drain Source Breakdown Voltage 1700 V, Gate Source Voltage -10 to 25 V, Gate Source Threshold Voltage 4.5 V, Power Dissipation 1350 W. Tags: Module.
Product Attribute | Attribute Value |
---|---|
Category | Discrete Semiconductor Products / SiC Power Module |
Manufacturer | Toshiba |
Factory Lead Time | 3 Weeks |
Description | Silicon Carbide N-Channel MOSFET |
Technology | SiC |
Continous Drain Current | 250 A |
Gate Source Voltage | -10 to 25 V |
Power Dissipation | 1350 W |
Industry | Industrial |
Applications | High-Power Switching, Motor Controllers (including rail traction) |
Product Attribute | Attribute Value |
---|---|
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Pbfree Code | yes |
Types of MOSFET | N-Channel Enhancement Mode |
Transistor Polarity | N-Channel |
Drain Source Breakdown Voltage | 1700 V |
Gate Source Threshold Voltage | 4.5 V |
Temperature operating range | -40 to 150 Degree C |
Package Type | Module |
MG250V2YMS3 Documents
Download datasheets and manufacturer documentation for MG250V2YMS3
-
Datasheets
MG250V2YMS3.pdf
Others include "MG250" parts
The following parts include 'MG250'
Part # | Manufacturer | Category | Availability |
---|---|---|---|
MG250Q6ES43 | IGBT Module | IGBT Modules | 2786 |
MG250YD2YMS3 | Toshiba | SiC Diode Modules |
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MG250V2YMS3 brand manufacturers: Toshiba, Bonchip stock, MG250V2YMS3 reference price. MG250V2YMS3 parameters, MG250V2YMS3 Datasheet PDF and pin diagram description download.You can use the MG250V2YMS3 Pluggable Connectors, DSP Datesheet PDF, find MG250V2YMS3 pin diagram and circuit diagram and usage method of function, MG250V2YMS3 electronics tutorials.You can download from the Bonchip.
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