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SI4388DY-T1-E3 Tech Specifications

MOSFET 2N-CH 30V 10.7A 8-SOIC

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Manufacturer Vishay / Siliconix
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 3V @ 250µA
Series TrenchFET®
Power - Max 3.3W, 3.5W
Package / Case 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
FET Feature Standard
Current - Continuous Drain (Id) @ 25°C 10.7A, 11.3A
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Supplier Device Package 8-SO
Rds On (Max) @ Id, Vgs 16 mOhm @ 8A, 10V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 946pF @ 15V
FET Type 2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss) 30V
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SI4388DY-T1-E3 Documents

Download datasheets and manufacturer documentation for SI4388DY-T1-E3

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