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SI6413DQ-T1-GE3 Tech Specifications

MOSFET P-CH 20V 7.2A 8TSSOP

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer Vishay / Siliconix
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 800mV @ 400µA
Supplier Device Package 8-TSSOP
Rds On (Max) @ Id, Vgs 10 mOhm @ 8.8A, 4.5V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds -
FET Type P-Channel
Drain to Source Voltage (Vdss) 20V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 1.05W (Ta)
Package / Case 8-TSSOP (0.173", 4.40mm Width)
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 105nC @ 5V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 7.2A (Ta)
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SI6413DQ-T1-GE3 Documents

Download datasheets and manufacturer documentation for SI6413DQ-T1-GE3

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