SIHP22N60E-GE3 Tech Specifications

MOSFET N-CH 600V 21A TO220AB

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer Vishay / Siliconix
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 4V @ 250µA
Technology MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 180 mOhm @ 11A, 10V
Packaging Cut Tape (CT)
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 1920pF @ 100V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±30V
Series E
Power Dissipation (Max) 227W (Tc)
Package / Case TO-220-3
Mounting Type Through Hole
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 600V
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SIHP22N60E-GE3 Documents

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SIHP22N60E-GE3 brand manufacturers: Vishay / Siliconix, Bonchip stock, SIHP22N60E-GE3 reference price. SIHP22N60E-GE3 parameters, SIHP22N60E-GE3 Datasheet PDF and pin diagram description download.You can use the SIHP22N60E-GE3 Pluggable Connectors, DSP Datesheet PDF, find SIHP22N60E-GE3 pin diagram and circuit diagram and usage method of function, SIHP22N60E-GE3 electronics tutorials.You can download from the Bonchip.
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