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SIS415DNT-T1-GE3 Tech Specifications
MOSFET P-CH 20V 35A 1212-8
Product Attribute | Attribute Value |
---|---|
Category | Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single |
Manufacturer | Vishay / Siliconix |
Factory Lead Time | 3 Weeks |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Technology | MOSFET (Metal Oxide) |
Series | TrenchFET® |
Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) |
Package / Case | PowerPAK® 1212-8 |
Mounting Type | Surface Mount |
Gate Charge (Qg) (Max) @ Vgs | 180nC @ 10V |
FET Feature | - |
Drain to Source Voltage (Vdss) | 20V |
Product Attribute | Attribute Value |
---|---|
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Pbfree Code | yes |
Vgs (Max) | ±12V |
Supplier Device Package | PowerPAK® 1212-8 |
Rds On (Max) @ Id, Vgs | 4 mOhm @ 20A, 10V |
Packaging | Tape & Reel (TR) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Input Capacitance (Ciss) (Max) @ Vds | 5460pF @ 10V |
FET Type | P-Channel |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
SIS415DNT-T1-GE3 Documents
Download datasheets and manufacturer documentation for SIS415DNT-T1-GE3
-
Datasheets
SIS415DNT-T1-GE3.pdf
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SIS412DN IC | Vishay Precision Group | Specialized Hot ICs | 556 |
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SIS415DNT-T1-GE3 brand manufacturers: Vishay / Siliconix, Bonchip stock, SIS415DNT-T1-GE3 reference price. SIS415DNT-T1-GE3 parameters, SIS415DNT-T1-GE3 Datasheet PDF and pin diagram description download.You can use the SIS415DNT-T1-GE3 Pluggable Connectors, DSP Datesheet PDF, find SIS415DNT-T1-GE3 pin diagram and circuit diagram and usage method of function, SIS415DNT-T1-GE3 electronics tutorials.You can download from the Bonchip.
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