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SQM200N04-1M1L_GE3 Tech Specifications

MOSFET N-CH 40V 200A TO-263

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer Vishay / Siliconix
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package TO-263-7
Rds On (Max) @ Id, Vgs 1.1 mOhm @ 30A, 10V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 20655pF @ 25V
FET Type N-Channel
Drain to Source Voltage (Vdss) 40V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 375W (Tc)
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 413nC @ 10V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 200A (Tc)
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SQM200N04-1M1L_GE3 Documents

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