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BSC052N03LSATMA1 Tech Specifications

Trans MOSFET N-CH 30V 17A 8-Pin TDSON

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 26 Weeks
Mount Surface Mount
Package / Case 8-PowerTDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position DUAL
Pin Count 8
Number of Elements 1
Power Dissipation-Max 2.5W Ta 28W Tc
Power Dissipation 2.5W
Turn On Delay Time 2.4 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 770pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 2.4 ns
Continuous Drain Current (ID) 17A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0072Ohm
REACH SVHC No SVHC
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
JESD-30 Code R-PDSO-F5
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.2m Ω @ 30A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 17A Ta 57A Tc
Rise Time 3.6ns
Vgs (Max) ±20V
Turn-Off Delay Time 13 ns
Threshold Voltage 2V
Max Dual Supply Voltage 30V
Radiation Hardening No
RoHS Status ROHS3 Compliant
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BSC052N03LSATMA1 Documents

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