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BSC059N04LSGATMA1 Tech Specifications

BSC059N04LSGATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 26 Weeks
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2013
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
JESD-30 Code R-PDSO-F5
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.9m Ω @ 50A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 16A Ta 73A Tc
Rise Time 3.4ns
Vgs (Max) ±20V
Turn-Off Delay Time 23 ns
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 16A
Pulsed Drain Current-Max (IDM) 292A
Radiation Hardening No
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-PowerTDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Part Status Active
Number of Terminations 5
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Position DUAL
Pin Count 8
Number of Elements 1
Power Dissipation-Max 2.5W Ta 50W Tc
Power Dissipation 50W
Turn On Delay Time 5.6 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 23μA
Input Capacitance (Ciss) (Max) @ Vds 3200pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 3.8 ns
Continuous Drain Current (ID) 73A
Max Dual Supply Voltage 40V
Drain-source On Resistance-Max 0.0059Ohm
Avalanche Energy Rating (Eas) 25 mJ
RoHS Status ROHS3 Compliant
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BSC059N04LSGATMA1 Documents

Download datasheets and manufacturer documentation for BSC059N04LSGATMA1

  • Datasheets

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