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BSS192PH6327FTSA1 Tech Specifications

BSS192PH6327FTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2002
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Form FLAT
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 1W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Vgs(th) (Max) @ Id 2V @ 130μA
Current - Continuous Drain (Id) @ 25°C 190mA Ta
Rise Time 5.2ns
Drive Voltage (Max Rds On,Min Rds On) 2.8V 10V
Fall Time (Typ) 50 ns
Continuous Drain Current (ID) 190mA
Max Dual Supply Voltage -250V
Feedback Cap-Max (Crss) 8 pF
Length 4.5mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-243AA
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Series SIPMOS®
Part Status Active
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Turn On Delay Time 4.7 ns
Rds On (Max) @ Id, Vgs 12 Ω @ 190mA, 10V
Input Capacitance (Ciss) (Max) @ Vds 104pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 6.1nC @ 10V
Drain to Source Voltage (Vdss) 250V
Vgs (Max) ±20V
Turn-Off Delay Time 72 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -250V
Height 1.5mm
Width 2.5mm
Lead Free Lead Free
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BSS192PH6327FTSA1 Documents

Download datasheets and manufacturer documentation for BSS192PH6327FTSA1

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