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BSZ040N04LSGATMA1 Tech Specifications

Trans MOSFET N-CH 40V 18A 8-Pin TSDSON EP

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mount Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package PG-TSDSON-8
Packaging Tape & Reel (TR)
Series OptiMOS™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Min Operating Temperature -55°C
Power Dissipation-Max 2.1W Ta 69W Tc
Turn On Delay Time 8.5 ns
Rds On (Max) @ Id, Vgs 4mOhm @ 20A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 18A Ta 40A Tc
Rise Time 4.8ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 5.4 ns
Continuous Drain Current (ID) 40A
Max Dual Supply Voltage 40V
Drain to Source Resistance 3.3mOhm
Radiation Hardening No
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 1998
Part Status Active
Max Operating Temperature 150°C
Technology MOSFET (Metal Oxide)
Power Dissipation 69W
FET Type N-Channel
Vgs(th) (Max) @ Id 2V @ 36μA
Input Capacitance (Ciss) (Max) @ Vds 5100pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Drain to Source Voltage (Vdss) 40V
Vgs (Max) ±20V
Turn-Off Delay Time 33 ns
Gate to Source Voltage (Vgs) 20V
Input Capacitance 5.1nF
Rds On Max 4 mΩ
RoHS Status ROHS3 Compliant
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BSZ040N04LSGATMA1 Documents

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