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BSZ040N06LS5ATMA1 Tech Specifications

BSZ040N06LS5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Package / Case 8-PowerTDFN
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Min Operating Temperature -55°C
Terminal Form NO LEAD
Reach Compliance Code not_compliant
JESD-30 Code S-PDSO-N3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Continuous Drain Current (ID) 17A
Drain to Source Breakdown Voltage 60V
Max Junction Temperature (Tj) 150°C
Height 1.1mm
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Published 2013
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Power Dissipation 2.1W
Turn On Delay Time 8.5 ns
Drain to Source Voltage (Vdss) 60V
Turn-Off Delay Time 25.6 ns
Gate to Source Voltage (Vgs) 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance 3.3mOhm
RoHS Status ROHS3 Compliant
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BSZ040N06LS5ATMA1 Documents

Download datasheets and manufacturer documentation for BSZ040N06LS5ATMA1

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