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IPA80R600P7XKSA1 Tech Specifications

MOSFET N-CHANNEL 800V 8A TO220

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 600m Ω @ 3.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds 570pF @ 500V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
JEDEC-95 Code TO-220AB
Pulsed Drain Current-Max (IDM) 22A
Avalanche Energy Rating (Eas) 20 mJ
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Operating Temperature -55°C~150°C TJ
Series CoolMOS™ P7
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 28W Tc
Case Connection ISOLATED
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 170μA
Current - Continuous Drain (Id) @ 25°C 8A Tc
Drain to Source Voltage (Vdss) 800V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.6Ohm
DS Breakdown Voltage-Min 800V
RoHS Status ROHS3 Compliant
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