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IPA90R1K0C3XKSA1 Tech Specifications

MOSFET N-CH 900V 5.7A TO220-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Terminal Finish Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 32W
Turn On Delay Time 70 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 370μA
Input Capacitance (Ciss) (Max) @ Vds 850pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 35 ns
Continuous Drain Current (ID) 5.7A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 900V
Dual Supply Voltage 900V
Nominal Vgs 3 V
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case TO-220-3 Full Pack
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2008
JESD-609 Code e3
Part Status Last Time Buy
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Power Dissipation-Max 32W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1 Ω @ 3.3A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 5.7A Tc
Rise Time 20ns
Vgs (Max) ±20V
Turn-Off Delay Time 400 ns
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 1Ohm
Pulsed Drain Current-Max (IDM) 12A
Avalanche Energy Rating (Eas) 97 mJ
REACH SVHC No SVHC
Lead Free Lead Free
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IPA90R1K0C3XKSA1 Documents

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