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IPA90R1K2C3XKSA1 Tech Specifications

MOSFET N-CH 900V 5.1A 10-220FP

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 29 Weeks
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 310μA
Current - Continuous Drain (Id) @ 25°C 5.1A Tc
Drain to Source Voltage (Vdss) 900V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 3.1A
DS Breakdown Voltage-Min 900V
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Operating Temperature -55°C~150°C TJ
Published 2008
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 3
Terminal Finish Tin (Sn)
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Power Dissipation-Max 31W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.2 Ω @ 2.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
JEDEC-95 Code TO-220AB
Pulsed Drain Current-Max (IDM) 10A
Avalanche Energy Rating (Eas) 68 mJ
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