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IPB017N10N5LFATMA1 Tech Specifications

IPB017N10N5LFATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™-5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PSSO-G6
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 313W Tc
Power Dissipation 313W
Turn On Delay Time 7 ns
Rds On (Max) @ Id, Vgs 1.7m Ω @ 100A, 10V
Input Capacitance (Ciss) (Max) @ Vds 840pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 195nC @ 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 31A
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 979 mJ
Height 4.5mm
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Published 2013
Part Status Active
Number of Terminations 6
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 4.1V @ 270μA
Current - Continuous Drain (Id) @ 25°C 180A Tc
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 128 ns
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 720A
Max Junction Temperature (Tj) 150°C
RoHS Status ROHS3 Compliant
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IPB017N10N5LFATMA1 Documents

Download datasheets and manufacturer documentation for IPB017N10N5LFATMA1

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