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IPB019N06L3GATMA1
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IPB019N06L3GATMA1 Tech Specifications
Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) TO-263
Product Attribute | Attribute Value |
---|---|
Category | Discrete Semiconductors / Single MOSFETs Transistors |
Manufacturer | Infineon Technologies |
Factory Lead Time | 3 Weeks |
Factory Lead Time | 13 Weeks |
Mounting Type | Surface Mount |
Number of Pins | 3 |
Manufacturer Package Identifier | PG-TO-263-3 |
Packaging | Tape & Reel (TR) |
Series | OptiMOS™ |
Pbfree Code | no |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Additional Feature | LOGIC LEVEL COMPATIBLE |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Reach Compliance Code | not_compliant |
Pin Count | 4 |
Qualification Status | Not Qualified |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 250W Tc |
Power Dissipation | 250W |
Turn On Delay Time | 35 ns |
Transistor Application | SWITCHING |
Vgs(th) (Max) @ Id | 2.2V @ 196μA |
Input Capacitance (Ciss) (Max) @ Vds | 28000pF @ 30V |
Gate Charge (Qg) (Max) @ Vgs | 166nC @ 4.5V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Fall Time (Typ) | 38 ns |
Continuous Drain Current (ID) | 120A |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 60V |
Max Junction Temperature (Tj) | 175°C |
REACH SVHC | No SVHC |
Lead Free | Contains Lead |
Product Attribute | Attribute Value |
---|---|
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Pbfree Code | yes |
Mount | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Published | 2008 |
JESD-609 Code | e3 |
Part Status | Active |
Number of Terminations | 2 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
[email protected] Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Number of Channels | 1 |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 1.9m Ω @ 100A, 10V |
Halogen Free | Halogen Free |
Current - Continuous Drain (Id) @ 25°C | 120A Tc |
Rise Time | 79ns |
Vgs (Max) | ±20V |
Turn-Off Delay Time | 131 ns |
Threshold Voltage | 1.7V |
Max Dual Supply Voltage | 60V |
Pulsed Drain Current-Max (IDM) | 480A |
Height | 4.57mm |
RoHS Status | ROHS3 Compliant |
IPB019N06L3GATMA1 Documents
Download datasheets and manufacturer documentation for IPB019N06L3GATMA1
-
Datasheets
Others include "IPB01" parts
The following parts include 'IPB01'
Part # | Manufacturer | Category | Availability |
---|---|---|---|
IPB010N06N | INFINEON | Specialized Hot ICs | 2635 |
IPB010N06N3G 010N06N | International Rectifier (Infineon Technologies) | Specialized Hot ICs | 683 |
IPB010N06NATMA1 | International Rectifier (Infineon Technologies) | Transistors - FETs, MOSFETs - Single | 2674 |
IPB010N06NATMA1 | Infineon Technologies | Single MOSFETs Transistors | |
IPB011N04L | INF | Specialized Hot ICs | 18 |
IPB011N04L G | International Rectifier (Infineon Technologies) | Transistors - FETs, MOSFETs - Single | 1067 |
IPB011N04LG | INFINEON | Specialized Hot ICs | 2796 |
IPB011N04LGATMA1 | International Rectifier (Infineon Technologies) | Transistors - FETs, MOSFETs - Single | 2635 |
IPB011N04LGATMA1 | Infineon Technologies | Single MOSFETs Transistors | |
IPB011N04N | International Rectifier (Infineon Technologies) | Specialized Hot ICs | 32377 |
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IPB019N06L3GATMA1 brand manufacturers: Infineon Technologies, Bonchip stock, IPB019N06L3GATMA1 reference price. IPB019N06L3GATMA1 parameters, IPB019N06L3GATMA1 Datasheet PDF and pin diagram description download.You can use the IPB019N06L3GATMA1 Pluggable Connectors, DSP Datesheet PDF, find IPB019N06L3GATMA1 pin diagram and circuit diagram and usage method of function, IPB019N06L3GATMA1 electronics tutorials.You can download from the Bonchip.
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